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| SUD50N024-09P Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24c FEATURES ID (A)d 49 36 D rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server TO-252 Drain Connected to Tab G D S G Top View S Ordering Information: SUD50N024-09P SUD50N024-09P--E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TC = 25_C L = 0.1 mH TC = 25_C TC= 100_C Symbol VDS(pulse) VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 24C 22 "20 49d 34d 100 4.3 29 42 6.5a 39.5 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 19 40 3.1 Maximum 23 50 3.8 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A. Document Number: 72290 S-41168--Rev. B, 14-Jun-04 www.vishay.com 1 SUD50N024-09P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 15 0.0135 50 0.008 0.0095 0.014 0.017 S W 22 0.8 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 10 V, VGS = 4.5 V, ID = 50 A 1.6 VGS = 0 V, VDS = 10 V, f = 1 MHz 1300 470 275 4.0 10.5 4.2 4.0 8 10 25 12 12 15 40 20 ns 6 16 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 6 V 80 I D - Drain Current (A) 5V I D - Drain Current (A) 80 25_C 60 125_C 40 100 TC = -55_C Transfer Characteristics 60 4V 40 20 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 20 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72290 S-41168--Rev. B, 14-Jun-04 2 SUD50N024-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 60 TC = -55_C 25_C 125_C r DS(on)- On-Resistance ( W ) 50 g fs - Transconductance (S) 40 30 20 10 0 0 10 20 30 40 50 0.025 VGS = 4.5 V 0.020 0.015 0.010 0.005 0.000 0 20 40 60 80 100 VGS = 10 V 0.030 On-Resistance vs. Drain Current ID - Drain Current (A) 2000 ID - Drain Current (A) 10 VDS = 10 V ID = 50 A Capacitance Gate Charge 1600 C - Capacitance (pF) Ciss 1200 V GS - Gate-to-Source Voltage (V) 8 6 800 Coss 400 Crss 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 4 2 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S - Source Current (A) Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72290 S-41168--Rev. B, 14-Jun-04 www.vishay.com 3 SUD50N024-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 25 1000 Limited by rDS(on) 100 I D - Drain Current (A) Safe Operating Area 20 I D - Drain Current (A) 10, 100 ms 1 ms 10 ms 100 ms 1s 10 s 100 s dc 15 10 10 1 5 0.1 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72290 S-41168--Rev. B, 14-Jun-04 |
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